Investigation on the growth mechanism of SiC whiskers
SiC crystals can be prepared at 1100 °C for 10 min. The optimized synthesis condition is approximately 1100 °C for 20 min. Higher temperatures or/and holding times lead to the re-oxidation of the SiC crystals. A layer of amorphous SiO 2 wraps around the SiC whisker surface and generates coated composites at all temperatures. Crystallite knots
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Influence of thermal oxidation on complex permittivity of
Influence of Thermal Oxidation on Complex . Permittivity and Microwave Absorbing Potential . of KD-I SiC Fiber Fabrics . Donghai Ding 1 Fa Luo2 Yimin Shi 2 Jin Chen. 1College of Materials and Mineral Resources Xi an University of Architecture and Technology Xi an Shaanxi CHINA
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Influence of the porosity of SiC on its optical properties
In this investigation the optical properties and the oxidation kinetics of two SiC materials of two different densities and post-treated at LCTS laboratory have been compared. Their room-temperature optical properties were measured and both materials were
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Investigation of Pits Formed at Oxidation on 4H-SiC
We report an experimental investigation of the pits formed at oxidation. The pits were formed by a long time oxidation in a dry or wet atmosphere at high temperature ( 1200 oC). Although they were observed in (0001) face they were not in (000-1) face. Comparing the points of oxidation pits to those of molten KOH etching pits on the same area of the substrate we show that the oxidation pits
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Influence of SiC infiltration on some properties of porous
Multilayered (PyC-SiC)n interphases (with n = 10-30 e(PyC) = 3-50 nm and e (SiC) = 10 or 30 nm) act as mechanical fuses and are more resistant to oxidation than pyrocarbon interphase.
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Oxidation of Silicon CarbideResearchGate
Several experimental studies on the oxidation of SiC with O 2 have been reported. It was observed that oxidation of SiC between • C resulted in a surface layer of SiO 2 that formed a
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Influence of SiC infiltration on some properties of porous
Multilayered (PyC-SiC)n interphases (with n = 10-30 e(PyC) = 3-50 nm and e (SiC) = 10 or 30 nm) act as mechanical fuses and are more resistant to oxidation than pyrocarbon interphase.
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Influence of SiC infiltration on some properties of porous
Multilayered (PyC-SiC)n interphases (with n = 10-30 e(PyC) = 3-50 nm and e (SiC) = 10 or 30 nm) act as mechanical fuses and are more resistant to oxidation than pyrocarbon interphase.
Get PriceOxidation of Silicon CarbideResearchGate
Several experimental studies on the oxidation of SiC with O 2 have been reported. It was observed that oxidation of SiC between • C resulted in a surface layer of SiO 2 that formed a
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Influence of the porosity of SiC on its optical properties
Jul 26 2019 · In this investigation the optical properties and the oxidation kinetics of two SiC materials of two different densities and post-treated at LCTS laboratory have been compared. Their room-temperature optical properties were measured and both materials were oxidized using solar facilities at PROMES laboratory.
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Investigations on the oxidation phenomenon of SiC/SiC
In the laser ablation process of CMC-SiC materials because SiC is the main component of CMC-SiC and it will generate SiO 2 due to the thermal effect caused by the accumulation of laser pulses which will cause surface oxidation of the material. Wang et al. 14 processed the C/SiC materials with pulsed laser in the air environment.
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Influence of Additives on Slag Resistance of Al2O3‐SiO2
Jan 20 2005 · The microstructures of Al 2 O 3 –SiO 2 –SiC–C refractory matrices with aluminum silicon Si 3 N 4 BN B 2 O 3 and B 4 C additives are characterized before and after a crucible slag test and the phases present are compared to those expected at thermodynamic equilibrium. The carbon content dominates the resistance to CaO–MgO–Al 2 O 3 –SiO 2 slag penetration while the viscosity
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INVESTIGATION OF THE ELECTROLESS NICKEL PLATED SiC
INVESTIGATION OF THE ELECTROLESS NICKEL PLATED SiC PARTICLES IN METAL MATRIX COMPOSITES J. Pázmán V. Mádai J. Tóth Z. Gácsi Abstract Electroless nickel (EN) plating was used to coat SiC particles using three different pre-treatment methods (acidic pre-treatment surface oxidation palladium chloride activation).
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Investigation on the growth mechanism of SiC whiskers
SiC crystals can be prepared at 1100 °C for 10 min. The optimized synthesis condition is approximately 1100 °C for 20 min. Higher temperatures or/and holding times lead to the re-oxidation of the SiC crystals. A layer of amorphous SiO 2 wraps around the SiC whisker surface and generates coated composites at all temperatures. Crystallite knots
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Influence of SiC addition on the properties of andalusite
Jun 24 2017 · The aim of this study is to determine the properties of fired andalusite brick with silicon carbide addition. Brick samples were prepared by mixing shaping drying and sintering at 1300 nbsp°C in a commercial tunnel kiln. The bulk density apparent porosity gas permeability and cold crushing strength of fired brick samples were determined. Slag penetration test was investigated
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Investigation of SiC/Oxide Interface Structures by
Dec 01 2014 · We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown oxide layers on SiC was obtained by observing the slope-shaped oxide layers and the results suggest the existence of the interface layers around 1 nm in thickness having high refractive index than those of both SiC and SiO2.
Get PriceIon Synthesis of SiC and Its Instability at High Temperatures
Silicon carbide is included in the oxidation resistant composite materials 42 In previous investigations the carbon ions with energy of 40 keV were used for SiC-peaks in the spectra of the infrared transmission due to the influence of the Gaussian
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Investigation on the laser ablation of SiC ceramics using
Aug 21 2016 · Research on the laser ablation behavior of SiC ceramics has great significance for the improvement of their anti-laser ability as high-performance mirrors in space and lasers or the laser surface micro-machining technology as electronic components in micro-electron mechanical systems (MEMS). In this work the laser ablation of SiC ceramics has been performed by using laser pulses of
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Experimental phase diagram of SiC in CH3SiCl3–Ar–H2 system
SiC Si and SiC C can be deposited on the surface of the separated jointing parts and SiC can be formed by an in-situ reaction from free Si and C in the SiC composites under high temperature. From this jointing strategy no other element will be introduced and the content of Si and C can be well controlled from the phase diagram.
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Influence of the porosity of SiC on its optical properties
Silicon Carbide (SiC) is a well-suited ceramic materials for the conception of volumetric solar receivers1 as it can resist to passive oxidation with the formation of a protective silica layer up to 2000 K in air. In this passive mode the semi-parabolic oxidation kinetics is controlled by the diffusion of molecular oxygen through the oxide layer.
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Investigations on the oxidation phenomenon of SiC/SiC
In the laser ablation process of CMC-SiC materials because SiC is the main component of CMC-SiC and it will generate SiO 2 due to the thermal effect caused by the accumulation of laser pulses which will cause surface oxidation of the material. Wang et al. 14 processed the C/SiC materials with pulsed laser in the air environment.
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Tensile strength and morphological investigation of SiC
SiC-coated film onto carbon fibers as a barrier of oxidation resistance and reaction between carbon fibers and metals was investigated. The chemical vapor deposition of silicon carbide onto carbon fibers was performed at various temperatures ranging from 700 to 1000°C using triisopropylsilane vapor carried by hydrogen gas. The strength of the SiC-coated carbon fibers was decreased due to
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Investigation of SiC–AlN system Part I. Microstructure
Krnel Kristoffer Sciti Diletta and Bellosi Alida 2003. Influence of long term oxidation on the microstructure mechanical and electrical properties of pressureless sintered AlN–SiC–MoSi2 ceramic composites. Journal of the European Ceramic Society Vol.
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Investigations of SiC aggregates oxidation Influence on
Apr 01 2012 · Thanks to thermogravimetric and thermal expansion tests kinetics of oxidation of the powder of SiC and of the castables has been investigated. According to these tests several important points have been underlined. Firstly the oxidation of SiC aggregates has a high influence on the thermal expansion and on the weight gain of SiC castables.
Get PriceInfluence of the porosity of SiC on its optical properties
Jul 26 2019 · In this investigation the optical properties and the oxidation kinetics of two SiC materials of two different densities and post-treated at LCTS laboratory have been compared. Their room-temperature optical properties were measured and both materials were oxidized using solar facilities at PROMES laboratory.
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Orientation Dependence of the Oxidation of SiC Surfaces
Nov 16 2001 · The orientation dependence of the thermal oxidation rates in 6H‐SiC has been investigated. The wet oxidation was performed in steam and in the temperature range of 1000 to 1200 °C. The linear rate sharply changes at an off‐angle around 30° from the 0001 ‐face.
Get PriceInvestigations of SiC aggregates oxidation Influence on
Firstly the oxidation of SiC aggregates has a high influence on the thermal expansion and on the weight gain of SiC castables. Secondly the grain size distribution of SiC aggregates within castables plays a dominating role (especially enhanced for the fine particles) in castable expansion behaviour induced by oxidation.
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(PDF) Thermal Oxidation of Silicon Carbide (SiC
In case of SiC another unique phenomenon has been observed that the oxidation of SiC is a face terminated oxidation means the both polar faces (Si and C face) have different oxidation rates
Get PriceInfluence of the porosity of SiC on its optical properties
Jul 26 2019 · In this investigation the optical properties and the oxidation kinetics of two SiC materials of two different densities and post-treated at LCTS laboratory have been compared. Their room-temperature optical properties were measured and both materials were oxidized using solar facilities at PROMES laboratory.
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